Field Effect of Photoluminescence from Excitons Bound to Nitrogen Atom Pairs in GaAs.

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  • Onomitsu Koji
    Department of Electrical, Electronics and Computer Engineering, School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555, Japan Kagami Memorial Laboratory for Material Science and Technologies, Waseda University, 2-8-26 Nishiwaseda, Shinjuku-ku, Tokyo 169-0051, Japan
  • Kawaharazuka Atsushi
    Department of Electrical, Electronics and Computer Engineering, School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555, Japan Kagami Memorial Laboratory for Material Science and Technologies, Waseda University, 2-8-26 Nishiwaseda, Shinjuku-ku, Tokyo 169-0051, Japan
  • Okabe Takehito
    Department of Electrical, Electronics and Computer Engineering, School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555, Japan Kagami Memorial Laboratory for Material Science and Technologies, Waseda University, 2-8-26 Nishiwaseda, Shinjuku-ku, Tokyo 169-0051, Japan
  • Makimoto Toshiki
    NTT Basic Research Laboratories, Atsugi, Kanagawa, 243-0124, Japan
  • Saito Hisao
    NTT Basic Research Laboratories, Atsugi, Kanagawa, 243-0124, Japan
  • Horikoshi Yoshiji
    Department of Electrical, Electronics and Computer Engineering, School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555, Japan Kagami Memorial Laboratory for Material Science and Technologies, Waseda University, 2-8-26 Nishiwaseda, Shinjuku-ku, Tokyo 169-0051, Japan

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Abstract

Field effect of photoluminescence due to excitons bound to nitrogen atom pairs in GaAs has been investigated for uniformly doped and atomic-layer-doped samples grown on (001) GaAs substrates. The intensities of excitonic photoluminescence lines due to distant nitrogen atom pairs decrease much more rapidly than those from closer pairs when the electric field is increased. In addition, photoluminescence due to the nearest neighbor pairs in atomic-layer-doped samples exhibits much more stable characteristics than that of uniformly doped samples against an applied electric field. This stability is observed only when the electric field is applied in either the [110] or [¯110] direction. This anomalous field effect can be explained by considering the electron trapping process to the isoelectric N traps modulated by the electric field.

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