Magnetic and Electric Properties in C/Mn/C/Si Multilayers.

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  • Nakatani Ryoichi
    Department of Materials Science and Engineering & Frontier Research Center, Graduate School of Engineering, Osaka University, Yamadaoka, Suita, Osaka 565-0871, Japan
  • Kusano Takayuki
    Department of Materials Science and Engineering & Frontier Research Center, Graduate School of Engineering, Osaka University, Yamadaoka, Suita, Osaka 565-0871, Japan
  • Yakame Hirotaka
    Department of Materials Science and Engineering & Frontier Research Center, Graduate School of Engineering, Osaka University, Yamadaoka, Suita, Osaka 565-0871, Japan
  • Yamamoto Masahiko
    Department of Materials Science and Engineering & Frontier Research Center, Graduate School of Engineering, Osaka University, Yamadaoka, Suita, Osaka 565-0871, Japan

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We have investigated the magnetic and electric properties of C/Mn/C/Si multilayers and found that annealing at temperatures above 590 K causes ferromagnetism at room temperature in the C/Mn/C/Si multilayers, although the as-deposited multilayers are not ferromagnetic. No known ferromagnetic compound is observed in the C/Mn/C/Si multilayers. Electrical resistance of the C/Mn/C/Si multilayers increases as temperature decreases for a current-flow perpendicular to the film plane (CPP). The changes in the resistance indicate that the C/Mn/C/Si multilayers are semiconductive.

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