Hydrogen-Induced Degradation Mechanisms in Ferroelectric PbZr<sub>0.4</sub>Ti<sub>0.6</sub>O<sub>3</sub>and Bi<sub>3.25</sub>La<sub>0.75</sub>Ti<sub>3</sub>O<sub>12</sub>Thin Films

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  • Yoon Jong-Gul
    Research Center for Oxide Electronics and School of Physics, Seoul National University, Seoul 151-742, Korea Department of Physics, University of Suwon, Kyunggi-do 445-743, Korea
  • Seo Sunae
    Research Center for Oxide Electronics and School of Physics, Seoul National University, Seoul 151-742, Korea
  • Kang Bo Soo
    Research Center for Oxide Electronics and School of Physics, Seoul National University, Seoul 151-742, Korea
  • Kim Jung Dae
    Research Center for Oxide Electronics and School of Physics, Seoul National University, Seoul 151-742, Korea
  • Noh Tae W.
    Research Center for Oxide Electronics and School of Physics, Seoul National University, Seoul 151-742, Korea
  • Lee Yong Kyun
    Microelectronics Lab, SAIT, Suwon 440-600, Korea
  • Park Young Soo
    Microelectronics Lab, SAIT, Suwon 440-600, Korea

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  • Hydrogen-Induced Degradation Mechanisms in Ferroelectric PbZr0.4Ti0.6O3 and Bi3.25La0.75Ti3O12 Thin Films.

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Hydrogen-induced degradation in PbZr0.4Ti0.6O3 and Bi3.25La0.75Ti3O12 (BLT) capacitors was investigated after forming gas annealing (FGA). By comparison, the BLT capacitors were found to have a high resistance against hydrogen-induced degradation at the low temperature FGA below 350°C. The BLT capacitors showed only a small reduction of remanent polarization and no deformation of hysteresis loops while the PZT showed a large polarization degradation after the same FGA process. The degradation of PZT at the low temperature FGA was investigated systematically by measuring the voltage shifts of hysteresis loop, and current-voltage and capacitance-voltage characteristics. Different degradation mechanisms are suggested for PZT and BLT by comparing experimental results including those of thermogravimetric analysis. For PZT films, pinning of domains and defect dipoles due to charged defects is inferred to dominate the initial stage of the degradation. On the other hand, for BLT films, hydrogen-induced decomposition seems to govern the degradation resulting in the increase of leakage current density and production of non-ferroelectric oxide(s).

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