Control of Macroscopic Absorption Coefficient of Multicrystalline SiGe by Microscopic Compositional Distribution.

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  • Usami Noritaka
    Institute for Materials Research (IMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
  • Fujiwara Kozo
    Institute for Materials Research (IMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
  • Ujihara Toru
    Institute for Materials Research (IMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
  • Sazaki Gen
    Institute for Materials Research (IMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
  • Yaguchi Hiroyuki
    Department of Electrical and Electronic Systems, Saitama University, 255 Shimo-Okubo, Saitama 338-8570, Japan
  • Murakami Yoshihiro
    Institute for Materials Research (IMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
  • Nakajima Kazuo
    Institute for Materials Research (IMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan

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We report on the growth and optical characterizations of multicrystalline SiGe (mc-SiGe) with microscopic compositional distribution for solar cell applications. Mc-SiGe was grown by a simple technique based on the casting method. The compositional distribution and solidification structure of mc-SiGe were found to be strongly dependent on the cooling rate, suggesting that they can be controlled by the growth parameters. Spatial variation of the extinction coefficient, corresponding to the microscopic compositional distribution, was revealed by spectroscopic ellipsometry, and macroscopic optical properties were found to be controlled by the microscopic compositional distribution. The advantage of mc-SiGe was further revealed by the increased absorption in the lower energies compared with uniform SiGe with almost the same average composition.

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