THz Electromagnetic Wave Radiation from Bulk Semiconductor Microcavities Excited by Short Laser Pulses.

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  • Sakurada Toshiya
    Department of Quantum Matter, Graduate School of Advanced Sciences of Matter, Hiroshima University, Kagamiyama 1-chome, Higashi-Hiroshima 739-8530, Japan
  • Kadoya Yutaka
    Department of Quantum Matter, Graduate School of Advanced Sciences of Matter, Hiroshima University, Kagamiyama 1-chome, Higashi-Hiroshima 739-8530, Japan
  • Yamanishi Masamichi
    Department of Quantum Matter, Graduate School of Advanced Sciences of Matter, Hiroshima University, Kagamiyama 1-chome, Higashi-Hiroshima 739-8530, Japan

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THz electromagnetic wave radiation from the surge current excited by short laser pulses in bulk semiconductor microcavities has been investigated. In the low excitation density regime, as a result of the increased absorption efficiency due to the round-trips of the excitation pulses in the cavity, the amplitude of the THz wave is enhanced by a factor of 2.6 in comparison with a reference sample without a cavity, which has the same band profile as the cavity samples. Due to the high density of the excited carriers, the THz-wave amplitude of the cavity samples shows sub-linear dependence on the excitation power, even in the low power density regime. The screening of the built-in electric field by the accumulated carriers is shown to explain the observed sub-linear dependence well.

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