Effect of Oxygen Coverage on Electron Emission from Boron-Doped Polycrystalline Diamond.

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  • Yamada Takatoshi
    Department of Electrical Engineering and Electronics, Aoyama-Gakuin University, 6-16-1 Chitosedai, Setagaya, Tokyo 157-8572, Japan
  • Kanda Ken-ichi
    Department of Electrical Engineering and Electronics, Aoyama-Gakuin University, 6-16-1 Chitosedai, Setagaya, Tokyo 157-8572, Japan
  • Okano Ken
    Department of Physics, International Christian University, 3-10-2 Osawa, Mitaka, Tokyo 181-8585, Japan
  • Sawabe Atsuhito
    Department of Electrical Engineering and Electronics, Aoyama-Gakuin University, 6-16-1 Chitosedai, Setagaya, Tokyo 157-8572, Japan

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The relationship between the electron emission properties of a boron-doped chemical vapor deposited polycrystalline diamond thin film and the oxygen coverage on the diamond surface is systematically investigated. The threshold voltage of electron emission becomes higher with increasing oxygen coverage on the surface. The change of emission barrier height estimated from the slopes of Fowler-Nordheim plots and from the coverage of adsorbed oxygen atoms is evaluated. From the results, it was speculated that the emission barrier height was changed by the surface dipole layer that was formed by oxygen atoms on the diamond surface and led to the changes in the electron emission properties.

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