Design and Measurement of Waveguide-Type PnpN Optical Thyristors for Optical Communications.

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  • Kim Doo Gun
    Optical Interconnection Laboratory, Department of Electrical and Electronic Engineering, Chung-Ang University, 221 Heuksuk-Dong, Dongjak-ku, Seoul 156-756, Korea
  • Lee Hee Hyun
    Optical Interconnection Laboratory, Department of Electrical and Electronic Engineering, Chung-Ang University, 221 Heuksuk-Dong, Dongjak-ku, Seoul 156-756, Korea
  • Choi Young Wan
    Optical Interconnection Laboratory, Department of Electrical and Electronic Engineering, Chung-Ang University, 221 Heuksuk-Dong, Dongjak-ku, Seoul 156-756, Korea
  • Lee Seok
    Photonics Research Center, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul 130-650, Korea
  • Woo Deok Ha
    Photonics Research Center, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul 130-650, Korea
  • Byun Young Tae
    Photonics Research Center, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul 130-650, Korea
  • Kim Jae Hun
    Photonics Research Center, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul 130-650, Korea
  • Kim Sun Ho
    Photonics Research Center, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul 130-650, Korea
  • Futakuchi Naoki
    Department of Electronic Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
  • Nakano Yoshiaki
    Department of Electronic Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

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Abstract

Waveguide-type InGaAs/InP multiple quantum well PnpN depleted optical thyristors operating at 1.55 μm are proposed and fabricated for the first time. In this paper, using the finite difference method (FDM), we calculate the effects of parameters such as doping concentration and the thicknesses of the outer and inner layers of the thyristor to determine the optimized structure in the view of fast and low-power-consuming operation. With these results, the fabricated optical thyristor shows sufficient nonlinear s-shape I-V characteristics with a switching voltage of 4.03 V, a holding voltage of 1.77 V, and spontaneous emission along the waveguide.

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