New n-Type Thermoelectric Oxide, Cd3 TeO6.

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  • Shan Yue Jin
    Department of Applied Chemistry, Faculty of Engineering, Utsunomiya University, 7-1-2 Yoto, Utsunomiya 321-8585, Japan
  • Sasaki Katsuhiko
    Department of Applied Chemistry, Faculty of Engineering, Utsunomiya University, 7-1-2 Yoto, Utsunomiya 321-8585, Japan
  • Sudo Kazuhiro
    Department of Applied Chemistry, Faculty of Engineering, Utsunomiya University, 7-1-2 Yoto, Utsunomiya 321-8585, Japan
  • Imoto Hideo
    Department of Applied Chemistry, Faculty of Engineering, Utsunomiya University, 7-1-2 Yoto, Utsunomiya 321-8585, Japan
  • Itoh Mitsuru
    Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Yokohama 226-8503, Japan

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Abstract

Electron doping into Cd3TeO6 with a 1:1 ordered perovskite-type structure was carried out by two methods: the introduction of oxygen vacancies, and the atomic substitution of In for Cd. Both methods turned polycrystalline samples into metallic conductors while single crystals with metallic conductivity were obtained by the second method. The resistivity and thermoelectric power of the single-crystal indium-substituted sample were 0.6 mΩ·cm and -50 μV·K-1, respectively, giving a power factor of 4× 10-4 W·K-2·m-1, which is the highest among nontransition metal oxides.

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