High Temperature Reactions of Ti with SiC(Materials, Metallurgy & Weldability)

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Bonding of SiC to SiC was conducted using Ti foil at bonding temperatures from 1373K to 1773K in vacuum. The total diffusion path between SiC and Ti was investigated in detail at 1673K using Ti foil with a thickness of 50μm. At a bonding time of 0.3ks, TiC at the Ti side and a mixture of Ti_5Si_3C_x and TiC at the SiC side were formed, yielding the structure sequence of β-Ti/TiC/Ti_5Si_3C_x+TiC/SiC. Furthermore, at the bonding time of 0.9ks, a Ti_5Si_3C_x layer phase appeared between SiC and the mixture of Ti_5Si_3C_x and TiC. Upon the formation of Ti_3SiC_2 (T phase) after the bonding time of 3.6ks, the complete diffusion path was observed as follows: β-Ti/TiC/Ti_5Si_3C_x+TiC/Ti_5Si_3C_x/Ti_3SiC_2/SiC. The activation energies for growth of TiC, Ti_5Si_3C_x and Ti_3SiC_2 were 194, 242 and 358kJ/mol, respectively.

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  • Transactions of JWRI

    Transactions of JWRI 24(1), 77-82, 1995-07

    大阪大学

各種コード

  • NII論文ID(NAID)
    110006485912
  • NII書誌ID(NCID)
    AA00867058
  • 本文言語コード
    ENG
  • ISSN
    03874508
  • データ提供元
    NII-ELS 
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