A Computational Model for Thin Film Formation during Ion Beam Mixing(Physics, Processes, Instruments & Measurements)

Search this Article

Author(s)

Abstract

A computational model for thin film formation during ion beam mixing is described in detail on the basis of the binary collision approximation (BCA). A new approach for the effect of residual gas on the growing thin film is also presented. This model has been applied for simulating AlN thin film formation under the condition of nitrogen ion energies of 0.25〜1.5keV and Al/N transport ratios of 0.5〜2.0. The calculated results show that ion energy plays an important role on the composition of the bulk film and the formation of the interface between the film and the substrate. The calculated results are also compared with experimental ones to demonstrate the abilities of the model. A fine agreement is shown for the transport ratio Al/N≧1. On the other hand, a discrepancy exists in the range of the transport ratio Al/N<1, the reason for which is discussed.

Journal

  • Transactions of JWRI

    Transactions of JWRI 26(1), 33-42, 1997-07

    Osaka University

Codes

  • NII Article ID (NAID)
    110006485970
  • NII NACSIS-CAT ID (NCID)
    AA00867058
  • Text Lang
    ENG
  • ISSN
    03874508
  • Data Source
    NII-ELS 
Page Top