Amorphous Hydrogenated Silicon Film Deposited by Reactive Electron Cyclotron Resonance Plasma(Physics, Process, Instruments & Measurements)

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Author(s)

Abstract

Amorphous hydrogenated silicon (a-Si:H) films were prepared by an electron cyclotron resonance (ECR) plasma in silane and/or hydrogen diluted gases with the pressure of several Pa. In the film formation the local feature of ECR phenomenon was correlated with the film synthesis and the experiments reported here were carried out in a divergent magnetic filed and the microwave power input was varied up to 500W. The effect of the local ECR phenomenon on the film synthesis was discussed with deposition electric property and composition of the films. It was found that the deposition rate and properties of the films changed drastically while their were deposited at different axial position in the plasma. The highest deposition rate was obtain near the axial resonance point with the value of 16 micrometer per hour in the silane plasma at the gas pressure of 4 Pa. Meanwhile the optical gap of the film shown lowest value of 1.74eV. Furthermore it was found that the photo conductivity of the films were also change remarkably while the distance L of the substrate holder and resonance region in axis was changed. The highest photo conductivity was obtained at L=6cm with the value of 1.5×10^<-7>S/cm, where the light intensity was 100μW in 550nm of the wavelength.

Journal

  • Transactions of JWRI

    Transactions of JWRI 21(1), 23-28, 1992-06

    Osaka University

Codes

  • NII Article ID (NAID)
    110006486971
  • NII NACSIS-CAT ID (NCID)
    AA00867058
  • Text Lang
    ENG
  • ISSN
    03874508
  • Data Source
    NII-ELS 
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