X-ray Irradiation-Induced Carrier Doping Effects in Organic Dimer–Mott Insulators

• Sasaki Takahiko

  Institute for Materials Research, Tohoku University

• Oizumi Hajime

  Institute for Materials Research, Tohoku University

• Yoneyama Naoki

  Institute for Materials Research, Tohoku University

• Kobayashi Norio

  Institute for Materials Research, Tohoku University

• Toyota Naoki

  Department of Physics, Graduate School of Science, Tohoku University

Abstract

We report X-ray irradiation-induced carrier doping effects on the electrical conductivity in the organic dimer–Mott insulators κ-(ET)₂X with X = Cu[N(CN)₂]Cl and Cu₂(CN)₃. For κ-(ET)₂Cu[N(CN)₂]Cl, we have observed a large decrease of the resistivity by 40% with the irradiation at 300 K and the metal-like temperature dependence down to about 50 K. The irradiation-induced defects expected at the donor molecule sites might cause a local imbalance of the charge transfer in the crystal. Such molecular defects result in the effective doping of carriers into the half-filled dimer–Mott insulators.

Journal

• Journal of the Physical Society of Japan

  Journal of the Physical Society of Japan 76 (12), 123701-123701, 2007

  THE PHYSICAL SOCIETY OF JAPAN

Keywords

• Mott insulator
• organic conductor
• BEDT-TTF
• carrier doping
• X-ray irradiation

Details

• CRID: 1390282679172193280
• NII Article ID: 130005296701
• NII Article ID: 110006532182
• NII Article ID: 210000107010
• NII Book ID: AA00704814
• DOI: 10.1143/jpsj.76.123701
• ISSN: 13474073
• ISSN: 00319015
• NDL BIB ID: 9304769
• Web Site: http://id.ndl.go.jp/bib/9304769
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I9304769
• Web Site: http://journals.jps.jp/doi/pdf/10.1143/JPSJ.76.123701
• Text Lang: en
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed