Fabrication of Aluminum Nitride Thin Film and Its Oxidation Behavior

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Abstract

The oxidation behavior of an aluminum nitride (AlN) thin film, fabricated by reactive DC magnetron sputtering using aluminum metal as a target material was examined. The obtained AlN film was transparent with a flat surface. An annealing test was carried out for the AlN film at 1000°C in air. The oxidation product was identified as <I>γ</I>-Al<SUB>2</SUB>O<SUB>3</SUB> by Rutherford backscattering composition and X-ray diffraction analyses. Transmission electron microscopy showed a polycrystalline Al<SUB>2</SUB>O<SUB>3</SUB> film with a grain size of several tens of nm. It was confirmed that the interface of AlN film and silicon substrate was protected from oxidation although the Al<SUB>2</SUB>O<SUB>3</SUB> layer thickness increased during the oxidation.

Journal

  • Journal of the Society of Materials Science, Japan

    Journal of the Society of Materials Science, Japan 55(8), 785-789, 2006-08-15

    The Society of Materials Science, Japan

References:  15

Codes

  • NII Article ID (NAID)
    110006571000
  • NII NACSIS-CAT ID (NCID)
    AN00096175
  • Text Lang
    ENG
  • Article Type
    ART
  • ISSN
    05145163
  • NDL Article ID
    8066255
  • NDL Source Classification
    ZM16(科学技術--科学技術一般--工業材料・材料試験)
  • NDL Call No.
    Z14-267
  • Data Source
    CJP  NDL  NII-ELS  J-STAGE 
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