Fabrication of Aluminum Nitride Thin Film and Its Oxidation Behavior

• YAMASHITA Masashi

  Japan Fine Ceramics Center Dept. of Materials Sci. and Eng., Nagoya Inst. of Tech.

• SASAKI Yukichi

  Japan Fine Ceramics Center

• ITO Hiroki

  Japan Fine Ceramics Center

• OHSATO Hitoshi

  Dept. of Materials Sci. and Eng., Nagoya Inst. of Tech.

• SHIBATA Noriyoshi

  Japan Fine Ceramics Center

抄録

The oxidation behavior of an aluminum nitride (AlN) thin film, fabricated by reactive DC magnetron sputtering using aluminum metal as a target material was examined. The obtained AlN film was transparent with a flat surface. An annealing test was carried out for the AlN film at 1000°C in air. The oxidation product was identified as γ-Al₂O₃ by Rutherford backscattering composition and X-ray diffraction analyses. Transmission electron microscopy showed a polycrystalline Al₂O₃ film with a grain size of several tens of nm. It was confirmed that the interface of AlN film and silicon substrate was protected from oxidation although the Al₂O₃ layer thickness increased during the oxidation.

収録刊行物

• 材料

  材料 55 (8), 785-789, 2006

  公益社団法人 日本材料学会

キーワード

• AlN
• Oxidation
• Al<SUB>2</SUB>O<SUB>3</SUB>
• DC magnetron sputtering

詳細情報

• CRID: 1390282680393986176
• NII論文ID: 110006571000
• NII書誌ID: AN00096175
• DOI: 10.2472/jsms.55.785
• ISSN: 18807488
• ISSN: 05145163
• NDL書誌ID: 8066255
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I8066255
• 本文言語コード: en
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可