Spin-Torque Diode Effect and Its Application

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  • Suzuki Yoshishige
    Graduate School of Engineering Science, Osaka University Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST)
  • Kubota Hitoshi
    Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST)

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A spin-polarized rf current injected into a magnetic cell exerts a torque to the local spin momenta and may excite ferromagnetic resonance (FMR) modes in the magnetic cell. FMR mode excitation in a magnetic tunnel junction is accompanied by the oscillation of its resistance and results a rectification effect. This “spin-torque diode effect” provides a quantitative measure of the spin-torque. By using this effect, the origin of the spin-torque and the critical voltage of spin-transfer magnetization switching were investigated. It is predicted that if the critical voltage becomes smaller than 25 mV, the spin-torque diode may have higher rectification output than p–n junction semiconductor diodes at room temperature. Also, the interplay between the giant tunneling magnetoresistance effect and the spin-torque will result in a negative differential resistance effect, and the magnetic tunneling junction may possess an amplification function.

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