Selective Area Growth of III-Nitride and Their Application for Emitting Devices

• HIRAMATSU Kazumasa

  Department of Electrical and Electronic Engineering, Mie University

• MIYAKE Hideto

  Department of Electrical and Electronic Engineering, Mie University

• LI Da-Bing

  Department of Electrical and Electronic Engineering, Mie University

Abstract

In this paper, the high quality AlGaN with high-Al content was grown on in-situ monitoring controlled selective area growth (SAG) GaN and the dislocation density of AlGaN is 1-3×10⁸ cm^-2. Furthermore, we use SAG to fabricate InGaN/GaN pyramid structures. CL (Cathodoluminescence) measurements reveal that the thickness, CL peak wavelength and CL intensity gradually increased from the bottom to the top of the facet. Furthermore, Vacuum fluorescent display (VFD) based on InGaN/GaN pyramid structures was demonstrated.

Journal

• Journal of Light & Visual Environment

  Journal of Light & Visual Environment 32 (2), 177-182, 2008

  The Illuminating Engineering Institute of Japan

Keywords

• Selective area growth
• AlGaN
• InGaN/GaN pyramid structuresVacuum fluorescent display

Details

• CRID: 1390282679593827712
• NII Article ID: 110006663908
• NII Article ID: 130004439661
• NII Book ID: AA00258424
• DOI: 10.2150/jlve.32.177
• ISSN: 13498398
• ISSN: 03878805
• Web Site: http://www.jstage.jst.go.jp/article/jlve/32/2/32_2_177/_pdf
• Web Site: http://dl.ndl.go.jp/info:ndljp/pid/10486421
• Text Lang: en
• Data Source:
  • JaLC
  • Crossref
  • NDL-Digital
  • CiNii Articles
• Abstract License Flag: Disallowed