Control of Grain Sizes and the Low-Field Magnetoresistance in Polycrystalline La0.7Sr0.3MnO3 Films

• Oka T.

  Department of Crystalline Materials Science, Nagoya Univ.

• Katou F.

  Department of Crystalline Materials Science, Nagoya Univ.

• Asano H.

  Department of Crystalline Materials Science, Nagoya Univ.

• Matsui M.

  TOYOTA RIKEN

Bibliographic Information

Other Title

• Ｌａ０．７Ｓｒ０．３ＭｎＯ３多結晶薄膜の粒径制御と低磁場磁気抵抗効果
• La0 7Sr0 3MnO3 タケッショウ ハクマク ノ リュウケイ セイギョ ト テイジバ ジキ テイコウ コウカ

Abstract

La_0.7Sr_0.3MnO₃ (LSMO) polycrystalline thin films were prepared by sputtering on YSZ (yttria stabilized zirconia) /Ba_0.4Sr_0.6TiO₃ (BSTO)-buffered Si substrate. The grain sizes of LSMO films were controlled by changing the substrate temperature and thickness of the BSTO buffer layers; we then investigated the low field magnetoresistance of LSMO films. We found that MR increased with decreasing LSMO grain sizes and increasing film resistivities. The results and mechanism of MR are discussed in terms of the register-network model based on intergrain spin polarized tunneling.

Journal

• Journal of the Magnetics Society of Japan

  Journal of the Magnetics Society of Japan 32 (3), 343-346, 2008

  The Magnetics Society of Japan

Keywords

• spin-polarized tunneling
• La_0.7Sr_0.3MnO₃
• thin film
• grain boundary

Details

• CRID: 1390001205287135744
• NII Article ID: 110006818153
• NII Book ID: AA12297999
• DOI: 10.3379/msjmag.32.343
• COI: 1:CAS:528:DC%2BD1cXos1ejsbs%3D
• ISSN: 18822932
• ISSN: 18822924
• NDL BIB ID: 9501668
• Web Site: http://id.ndl.go.jp/bib/9501668
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I9501668
• Text Lang: ja
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
  • KAKEN
• Abstract License Flag: Disallowed