Visualization of microscopic stress fields in silica glass in the scanning electron microscope

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  • PEZZOTTI Giuseppe
    Ceramic Physics Laboratory & Research Institute for Nanoscience, RIN, Kyoto Institute of Technology
  • LETO Andrea
    Ceramic Physics Laboratory & Research Institute for Nanoscience, RIN, Kyoto Institute of Technology
  • PORPORATI Alessandro Alan
    Ceramic Physics Laboratory & Research Institute for Nanoscience, RIN, Kyoto Institute of Technology

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Abstract

Quantitative measurements were made in silica glass of highly graded stress fields, as they developed: (i) in the K-dominated zone ahead of the tip of a median-type indentation micro-crack; and, (ii) at a silicon-silica interface of a metal-oxide semiconductor (MOS) device. Stress fields could be visualized on a microscopic scale using a field-emission scanning electron microscope (FE-SEM) equipped with a spectrally resolved cathodoluminescence (CL) device, according to piezo-spectroscopic (PS) assessments. The peculiarity of this newly proposed PS assessment resides in the fact that the performed CL/PS analysis exploited a peculiar luminescence emitted by optically active oxygen point defects in silica glass.

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