High-quality single crystal growth of Bi-based perovskite ferroelectrics based on defect chemistry
-
- NOGUCHI Yuji
- Research Center for Advanced Science and Technology, The University of Tokyo
-
- TANABE Ichiro
- Research Center for Advanced Science and Technology, The University of Tokyo
-
- SUZUKI Muneyasu
- Research Center for Advanced Science and Technology, The University of Tokyo
-
- MIYAYAMA Masaru
- Research Center for Advanced Science and Technology, The University of Tokyo
Search this article
Abstract
We present the O2-blowing method for the growth of high-quality single crystals of Bi-based perovskite ferroelectrics, in which O2 gas is directly introduced inside crucibles during crystal growth. The O2-blowing method is demonstrated to be effective for enhancing polarization and piezoelectric properties as well as reducing leakage current for (Bi,Na)TiO3-BaTiO3 crystals. The superior properties are suggested to originate from the reduced reorientation of non-180° domains. Ab initio calculations suggest that the interaction between spontaneous polarization and defect dipole composed of Bi vacancy and O vacancy is the origin of the reorientation of non-180° domains.
Journal
-
- Journal of the Ceramic Society of Japan
-
Journal of the Ceramic Society of Japan 116 (1357), 994-1001, 2008
The Ceramic Society of Japan
- Tweet
Keywords
Details 詳細情報について
-
- CRID
- 1390282680260164608
-
- NII Article ID
- 110006914866
-
- NII Book ID
- AA12229489
-
- ISSN
- 13486535
- 18820743
-
- NDL BIB ID
- 9627964
-
- Text Lang
- en
-
- Data Source
-
- JaLC
- NDL
- Crossref
- CiNii Articles
-
- Abstract License Flag
- Disallowed