Observation of Half-Integer Quantum Hall Effect in Single-Layer Graphene Using Pulse Magnet

• Masubuchi Satoru

  Institute of Industrial Science, University of Tokyo

• Suga Ken-ichi

  Institute for Solid State Physics, University of Tokyo

• Ono Masashi

  Institute of Industrial Science, University of Tokyo

• Kindo Koichi

  Institute for Solid State Physics, University of Tokyo

• Takeyama Shojiro

  Institute for Solid State Physics, University of Tokyo

• Machida Tomoki

  Institute of Industrial Science, University of Tokyo Institute for Nano Quantum Information Electronics, University of Tokyo

抄録

We report on the magnetotransport measurement on a single-layer graphene in pulsed magnetic fields up to B=53 T. With either electron- or hole-type charge carriers, the Hall resistance R_H is quantized into R_H=(h⁄e²)ν⁻¹ with ν=±2, ±6, and ±10, which demonstrates the observation of a half-integer quantum Hall effect (QHE). At B=50 T, the half-integer QHE is even observed at room temperature in spite of a conventional carrier mobility μ=4000 cm² V⁻¹ s⁻¹.

収録刊行物

• Ｊｏｕｒｎａｌ　ｏｆ　ｔｈｅ　Ｐｈｙｓｉｃａｌ　Ｓｏｃｉｅｔｙ　ｏｆ　Ｊａｐａｎ

  Ｊｏｕｒｎａｌ　ｏｆ　ｔｈｅ　Ｐｈｙｓｉｃａｌ　Ｓｏｃｉｅｔｙ　ｏｆ　Ｊａｐａｎ 77 (11), 113707-113707, 2008

  一般社団法人 日本物理学会

キーワード

• graphene
• quantum Hall effect
• pulsed magnetic field technique

詳細情報

• CRID: 1390282679174773120
• NII論文ID: 130005436276
• NII論文ID: 110006983729
• NII論文ID: 210000107511
• NII書誌ID: AA00704814
• DOI: 10.1143/jpsj.77.113707
• BIBCODE: 2008JPSJ...77k3707M
• ISSN: 13474073
• ISSN: 00319015
• ISSN: http://id.crossref.org/issn/00319015
• NDL書誌ID: 9706127
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I9706127
• Web Site: https://journals.jps.jp/doi/pdf/10.1143/JPSJ.77.113707
• 本文言語コード: en
• データソース種別:
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  • NDL
  • Crossref
  • CiNii Articles
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