Observation of Half-Integer Quantum Hall Effect in Single-Layer Graphene Using Pulse Magnet

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Author(s)

Abstract

We report on the magnetotransport measurement on a single-layer graphene in pulsed magnetic fields up to B=53T. With either electron-or hole-type charge carriers, the Hall resistance R_H is quantized into R_H=(h/e^2)υ^<-1> with υ=±2,±6, and ±10, which demonstrates the observation of a half-integer quantum Hall effect(QHE). At B=50T, the half-integer QHE is even observed at room temperature in spite of a conventional carrier mobility μ=4000cm^2V^<-1>s^<-1>.

Journal

  • Journal of the Physical Society of Japan

    Journal of the Physical Society of Japan 77(11), "113707-1"-"113707-4", 2008-11-15

    The Physical Society of Japan (JPS)

References:  18

Codes

  • NII Article ID (NAID)
    110006983729
  • NII NACSIS-CAT ID (NCID)
    AA00704814
  • Text Lang
    ENG
  • Article Type
    SHO
  • ISSN
    00319015
  • NDL Article ID
    9706127
  • NDL Source Classification
    ZM35(科学技術--物理学)
  • NDL Call No.
    Z53-A404
  • Data Source
    CJP  NDL  NII-ELS 
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