Observation of Half-Integer Quantum Hall Effect in Single-Layer Graphene Using Pulse Magnet

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We report on the magnetotransport measurement on a single-layer graphene in pulsed magnetic fields up to B=53T. With either electron-or hole-type charge carriers, the Hall resistance R_H is quantized into R_H=(h/e^2)υ^<-1> with υ=±2,±6, and ±10, which demonstrates the observation of a half-integer quantum Hall effect(QHE). At B=50T, the half-integer QHE is even observed at room temperature in spite of a conventional carrier mobility μ=4000cm^2V^<-1>s^<-1>.

収録刊行物

  • Journal of the Physical Society of Japan

    Journal of the Physical Society of Japan 77(11), "113707-1"-"113707-4", 2008-11-15

    一般社団法人日本物理学会

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各種コード

  • NII論文ID(NAID)
    110006983729
  • NII書誌ID(NCID)
    AA00704814
  • 本文言語コード
    ENG
  • 資料種別
    SHO
  • ISSN
    00319015
  • NDL 記事登録ID
    9706127
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z53-A404
  • データ提供元
    CJP書誌  NDL  NII-ELS 
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