Equilibrium of dissolving species in aqueous H2SiF6 solution during the liquid phase deposition reaction

• MIZUHATA Minoru

  Department of Chemical Science and Engineering, Graduate School of Engineering, Kobe University

• SAITO Yasuhiro

  Department of Chemical Science and Engineering, Graduate School of Engineering, Kobe University

• TAKEE Masao

  Department of Chemical Science and Engineering, Graduate School of Engineering, Kobe University

• DEKI Shigehito

  Department of Chemical Science and Engineering, Graduate School of Engineering, Kobe University

Abstract

The equilibrium reaction of H₂SiF₆ solution in the LPD method was investigated by the measurement of UV and IR spectroscopies, vapor pressure and electric conductivity. These measurements were carried out by adding the F^- scavenger such as H₃BO₃ and Al metal which shifts the equilibrium reaction. The experimental results strongly suggested the presence of SiF₄ and [SiF₆·SiF₄]^2- in H₂SiF₆ solution. These species were estimated to be involved in the LPD process as intermediates and important for controlling the deposition process of metal oxide.

Journal

• Journal of the Ceramic Society of Japan

  Journal of the Ceramic Society of Japan 117 (1363), 335-339, 2009

  The Ceramic Society of Japan

Keywords

• Liquid phase deposition
• SiO₂
• Thin films

Details

• CRID: 1390001205282557824
• NII Article ID: 110007123875
• NII Book ID: AA12229489
• DOI: 10.2109/jcersj2.117.335
• ISSN: 13486535
• ISSN: 18820743
• NDL BIB ID: 10163690
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I10163690
• Web Site: http://www.jstage.jst.go.jp/article/jcersj2/117/1363/117_1363_335/_pdf
• Text Lang: en
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
  • KAKEN
• Abstract License Flag: Disallowed