Temperature Dependent f-Electron Valence of Ion in Two-Level Kondo System

• Tanikawa Shinya

  Division of Materials Physics, Department of Materials Engineering Science, Graduate School of Engineering Science, Osaka University

• Matsuura Hiroyasu

  Division of Materials Physics, Department of Materials Engineering Science, Graduate School of Engineering Science, Osaka University

• Miyake Kazumasa

  Division of Materials Physics, Department of Materials Engineering Science, Graduate School of Engineering Science, Osaka University

Abstract

Theory for temperature dependent valence of Sm ion in magnetically robust heavy fermion system SmOs₄Sb₁₂ is presented on the basis of the two-level (or double-well) Kondo model. It is shown that the conduction electrons with f-symmetry accumulate on the ion tunneling between double well potential when the temperature is decreased across the Kondo temperature.

Journal

• Journal of the Physical Society of Japan

  Journal of the Physical Society of Japan 78 (3), 034707-034707, 2009

  THE PHYSICAL SOCIETY OF JAPAN

Keywords

• two-level Kondo effect
• two-loop renormalization group
• temperature dependent valence
• SmOs<SUB>4</SUB>Sb<SUB>12</SUB>

Details

• CRID: 1390001204196475136
• NII Article ID: 130005437304
• NII Article ID: 110007138868
• NII Article ID: 210000107716
• NII Book ID: AA00704814
• DOI: 10.1143/jpsj.78.034707
• ISSN: 13474073
• ISSN: 00319015
• NDL BIB ID: 10183185
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I10183185
• Web Site: https://journals.jps.jp/doi/pdf/10.1143/JPSJ.78.034707
• Text Lang: en
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed