26aB03 金属ガリウム原料を用いた窒化ガリウム結晶の気相成長(窒化物(1),第34回結晶成長国内会議)
書誌事項
- タイトル別名
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- 26aB03 The vapor phase growth of GaN crystals using metal Ga as a starting material(NCCG-34)
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The growth of GaN crystals using metal Ga as a starting material was performed under high pressure. Hydrogen gas was used as a carrier gas in the growth. The evaporation rate of Ga suggested that Ga compounds was formed in the vapor phase. It is indicated that these compounds are reactant with ammonia to form GaN crystals.
収録刊行物
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- 日本結晶成長学会誌
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日本結晶成長学会誌 31 (3), 206-, 2004
日本結晶成長学会
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詳細情報 詳細情報について
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- CRID
- 1390001205898390400
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- NII論文ID
- 110007327454
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- NII書誌ID
- AN00188386
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- ISSN
- 21878366
- 03856275
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可