26aB03 金属ガリウム原料を用いた窒化ガリウム結晶の気相成長(窒化物(1),第34回結晶成長国内会議)

DOI

書誌事項

タイトル別名
  • 26aB03 The vapor phase growth of GaN crystals using metal Ga as a starting material(NCCG-34)

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The growth of GaN crystals using metal Ga as a starting material was performed under high pressure. Hydrogen gas was used as a carrier gas in the growth. The evaporation rate of Ga suggested that Ga compounds was formed in the vapor phase. It is indicated that these compounds are reactant with ammonia to form GaN crystals.

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詳細情報 詳細情報について

  • CRID
    1390001205898390400
  • NII論文ID
    110007327454
  • NII書誌ID
    AN00188386
  • DOI
    10.19009/jjacg.31.3_206
  • ISSN
    21878366
    03856275
  • 本文言語コード
    ja
  • データソース種別
    • JaLC
    • CiNii Articles
  • 抄録ライセンスフラグ
    使用不可

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