17aB03 液相成長法によるSi(100)基板上のInp選択エピタキシャル成長(半導体エピ(1),第35回結晶成長国内会議)
書誌事項
- タイトル別名
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- 17aB03 Area selective epitaxy of InP/Si(100) by liquid phase epitaxy(NCCG-35)
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LPE of InP on Si was attempt by area selective epitaxy and epitaxial lateral overgrowth technique for the reduction of the dislocation density and the lattice strain. The area selective epitaxy was achieved in the narrow open seed area and the small nuclei were formed on the wide opening area. X-ray diffraction results have shown the lattice strain in the InP nuclei on Si substrate. Huber etching revealed the dislocation-related etch pits on the area selective epitaxial layers.
収録刊行物
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- 日本結晶成長学会誌
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日本結晶成長学会誌 32 (3), 130-, 2005
日本結晶成長学会
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詳細情報 詳細情報について
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- CRID
- 1390282680874773120
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- NII論文ID
- 110007331718
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- NII書誌ID
- AN00188386
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- ISSN
- 21878366
- 03856275
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可