Transfer and Detection of Single Electrons Using Metal-Oxide-Semiconductor Field-Effect Transistors

• ZHANG Wancheng

  NTT Basic Research Laboratories, NTT Corporation

• NISHIGUCHI Katsuhiko

  NTT Basic Research Laboratories, NTT Corporation

• ONO Yukinori

  NTT Basic Research Laboratories, NTT Corporation

• FUJIWARA Akira

  NTT Basic Research Laboratories, NTT Corporation

• YAMAGUCHI Hiroshi

  NTT Basic Research Laboratories, NTT Corporation

• INOKAWA Hiroshi

  the Research Institute of Electronics, Shizuoka University

• TAKAHASHI Yasuo

  the Graduate School of Information Science and Technology, Hokkaido University

• WU Nan-Jian

  the Institute of Semiconductor, Chinese Academy of Science

Abstract

A single-electron turnstile and electrometer circuit was fabricated on a silicon-on-insulator substrate. The turnstile, which is operated by opening and closing two metal-oxide-semiconductor field-effect transistors (MOSFETs) alternately, allows current quantization at 20K due to single-electron transfer. Another MOSFET is placed at the drain side of the turnstile to form an electron storage island. Therefore, one-by-one electron entrance into the storage island from the turnstile can be detected as an abrupt change in the current of the electrometer, which is placed near the storage island and electrically coupled to it. The correspondence between the quantized current and the single-electron counting was confirmed.

Journal

• IEICE transactions on electronics

  IEICE transactions on electronics 90 (5), 943-948, 2007-05-01

  The Institute of Electronics, Information and Communication Engineers

Keywords

• single-electron
• MOSFET
• turnstile
• single-electron detection

Details

• CRID: 1573950402277188608
• NII Article ID: 110007519656
• NII Book ID: AA10826283
• ISSN: 09168524
• Text Lang: en
• Data Source:
  • CiNii Articles