Physical Origin of Stress-Induced Leakage Currents in Ultra-Thin Silicon Dioxide Films

• ENDOH Tetsuo

  the Research Institute of Electrical Communication, Tohoku University

• HIROSE Kazuyuki

  the Institute of Space and Astronautical Science, JAXA

• SHIRAISHI Kenji

  the Graduate School of Pure & Applied Physics, University of Tsukuba

Abstract

The physical origin of stress-induced leakage currents (SILC) in ultra-thin SiO_2 films is described. Assuming a two-step trapassisted tunneling process accompanied with an energy relaxation process of trapped electrons, conditions of trap sites which are origin of SICL are quantitatively found. It is proposed that the trap site location and the trap state energy can be explained by a mean-free-path of hole in SiO_2 films and an atomic structure of the trap site by the O vacancy model.

Journal

• IEICE transactions on electronics

  IEICE transactions on electronics 90 (5), 955-961, 2007-05-01

  The Institute of Electronics, Information and Communication Engineers

Keywords

• SILC
• stress-induced leakage current
• SiO_2
• ultra thin silicon dioxide
• mean-free-path
• O vacancy model

Details

• CRID: 1571980077440219776
• NII Article ID: 110007519658
• NII Book ID: AA10826283
• ISSN: 09168524
• Text Lang: en
• Data Source:
  • CiNii Articles