Fabrication of a Monolithically Integrated WDM Channel Selector Using Single Step Selective Area MOVPE and Its Characterization

• AL AMIN Abdullah

  the Dept. of Electronic Engineering, The University of Tokyo

• SAKURAI Kenji

  the Dept. of Electronic Engineering, The University of Tokyo

• SHIODA Tomonari

  the Dept. of Electronic Engineering, The University of Tokyo

• SUGIYAMA Masakazu

  the Dept. of Electronic Engineering, The University of Tokyo

• NAKANO Yoshiaki

  Research Center for Advanced Science and Technology, The University of Tokyo

Abstract

An 8ch, 400GHz monolithically integrated WDM channel selector featuring an array of quantum well semiconductor optical amplifiers (SOA) and arrayed waveguidegrating demultiplexer is presented. Reduction of fabrication complexity was achieved by using a single step selective area MOVPE to realize the different bandgap profiles for the SOA array and passive region. The selective growth mask dimensions were optimized by simulation. Dry-etching with short bending radii of 200μm resulted in compact device size of 7mm×2.5mm. Static channel selection with high ON-OFF ratio of >40dB was achieved.

Journal

• IEICE transactions on electronics

  IEICE transactions on electronics 90 (5), 1124-1128, 2007-05-01

  The Institute of Electronics, Information and Communication Engineers

Keywords

• WDM channel selector
• selective area MOVPE
• photonic integrated circuit
• InGaAsP quantum well
• semiconductor optical amplifier

Details

• CRID: 1572261552416926720
• NII Article ID: 110007519683
• NII Book ID: AA10826283
• ISSN: 09168524
• Text Lang: en
• Data Source:
  • CiNii Articles