A Mechanism of Enhancement-Mode Operation of AlGaN/GaN MIS-HFET

• KIKUTA Daigo

  Department of Electrical and Electronic Engineering, The University of Tokushima

• AO Jin-Ping

  Department of Electrical and Electronic Engineering, The University of Tokushima

• MATSUDA Junya

  Department of Electrical and Electronic Engineering, The University of Tokushima

• OHNO Yasuo

  Department of Electrical and Electronic Engineering, The University of Tokushima

Abstract

A model for the enhancement-mode operation of an AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistor (MIS-HFET) under DC and AC conditions is proposed. In DC operation at positive gate voltages, the MIS-HFET can be divided into a transistor area and a resistor area due to the diode nature of the insulator/AlGaN interface. The transistor area shrinks with the increases in gate voltage. The intrinsic-transistor gate-length reduction causes a drain current increase. The I-V characteristics based on the gradual channel approximation are derived. The I_D hysteresis of the MIS-HFET is investigated by a circuit simulation using SPICE. We have confirmed that the hysteresis was caused by the phase difference between the potential variation of the gate insulator/AlGaN interface and that of the gate electrode due to CR components in the gate structure.

Journal

• IEICE Trans. Electron., C

  IEICE Trans. Electron., C 89 (7), 1031-1036, 2006-07-01

  The Institute of Electronics, Information and Communication Engineers

Keywords

• HFET
• GaN
• AlGaN
• MIS
• insulator
• enhancement

Details

• CRID: 1571417127545010304
• NII Article ID: 110007538783
• NII Book ID: AA10826283
• ISSN: 09168524
• Text Lang: en
• Data Source:
  • CiNii Articles