Influence of Ohmic Contact Resistance on Transconductance in AlGaN/GaN HEMT

• HIROSE Yoshikazu

  Department of Materials Science and Engineering, and Nano-factory, Meijo University

• HONSHIO Akira

  Department of Materials Science and Engineering, and Nano-factory, Meijo University

• KAWASHIMA Takeshi

  Department of Materials Science and Engineering, and Nano-factory, Meijo University

• IWAYA Motoaki

  Department of Materials Science and Engineering, and Nano-factory, Meijo University

• KAMIYAMA Satoshi

  Department of Materials Science and Engineering, and Nano-factory, Meijo University

• TSUDA Michinobu

  Department of Materials Science and Engineering, and Nano-factory, Meijo University

• AMANO Hiroshi

  Department of Materials Science and Engineering, and Nano-factory, Meijo University

• AKASAKI Isamu

  Department of Materials Science and Engineering, and Nano-factory, Meijo University

Abstract

The correlation between ohmic contact resistivity (ρ_c) and transconductance (g_m) in AlGaN/GaN high-electron-mobility transistors (HEMTs) was investigated. To characterize ρ-c precisely, we fabricated a circular transmission line model (c-TLM) pattern adjoined to a field-effect transistor (FET) pattern on an HEMT. By measuring ohmic contact resistance and sheet resistance using the adjoined c-TLM, intrinsic transcon-ductance (g_<m0>), which is not influenced by the source resistance, can be estimated. The g_<m0> thus obtained is between 179 and 206mS/mm. Then, it became possible to calculate the correlation between g_m and ρ_c. We found that ρ_c should be below 10^<-5>Ωcm^2 for the improvement of g_m in AlGaN/GaN HEMT when R_<sh>≒400Ω/□.

Journal

• IEICE transactions on electronics

  IEICE transactions on electronics 89 (7), 1064-1067, 2006-07-01

  The Institute of Electronics, Information and Communication Engineers

Keywords

• AlGaN
• GaN HEMT
• contact resistance
• transconductance

Details

• CRID: 1573105977405282048
• NII Article ID: 110007538789
• NII Book ID: AA10826283
• ISSN: 09168524
• Text Lang: en
• Data Source:
  • CiNii Articles