書誌事項
- タイトル別名
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- Analysis of Crack Propagation in Stealth Dicing Using Stress Intensity Factor(<Special Issue>M & M 2009 Conference)
- ステルスダイシングにおける応力拡大係数を用いたき裂進展解析
- ステルスダイシング ニ オケル オウリョク カクダイ ケイスウ オ モチイタ キレツ シンテン カイセキ
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In stealth dicing (SD), a permeable nanosecond laser is focused inside a silicon wafer and scanned horizontally. A thermal shock wave is propagated every pulse toward the side to which the laser is irradiated, then a high dislocation density layer is formed inside a wafer after the thermal shock wave propagation. In our previous study, it was supposed that an internal crack whose initiation is a dislocation is propagated when the thermal shock wave by the next pulse over-laps with this layer partially. In this study, a two-dimensional thermal elasticity analysis based on the fracture mechanics was conducted. The internal crack propagation was analyzed by calculating the stress intensity factor at the crack tips and comparing with a threshold of that. As a result, validity of the previous hypothesis was suggested.
収録刊行物
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- 日本機械学会論文集A編
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日本機械学会論文集A編 76 (764), 446-448, 2010
一般社団法人 日本機械学会
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詳細情報 詳細情報について
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- CRID
- 1390282679455112704
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- NII論文ID
- 110007593687
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- NII書誌ID
- AN0018742X
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- ISSN
- 18848338
- 03875008
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- NDL書誌ID
- 10684768
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
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- CiNii Articles
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- 使用不可