21415 CMPプロセスにおける材料除去モデルの研究 : 第二報-原子間力顕微鏡を用いた材料除去現象の検討(CMP,OS.1 機械工学が支援する微細加工技術(半導体・MEMS・NEMS),学術講演)

• 橋山 雄一

  九工大

• 木村 景一

• カチョーンルンルアン パナート

書誌事項

タイトル別名

• 21415 A study on material removal model in CMP process : 2nd report-Investigation of material removal phenomenon using AFM

抄録

The material removal phenomenon in CMP process is not clarified yet. Therefore, the appropriate material removal model has not established. In this study, the interaction among wafer surface, polishing pad surface and fine particles in slurry was observed and material removal mechanism was investigated. At first, the property of SiO_2 film in solution was investigated with AFM indentation. Next, the AFM tip after indentation was observed with SEM-EDX system. In pH7〜pH 10 solution, SiO_2 film changed to soft material, and small adherent which was SiO_2 was observed in pH7 solution. This fact suggests that fine particles in slurry adhere materials from SiO_2 film with chemical adherent force.

収録刊行物

• 日本機械学会関東支部総会講演会講演論文集

  日本機械学会関東支部総会講演会講演論文集 2008.14 (0), 409-410, 2008

  一般社団法人 日本機械学会

キーワード

• chemical mechanical polishing
• CMP
• material removal
• modeling
• AFM

詳細情報

• CRID: 1390001205845412224
• NII論文ID: 110007705394
• DOI: 10.1299/jsmekanto.2008.14.409
• ISSN: 24242691
• Web Site: https://www.jstage.jst.go.jp/article/jsmekanto/2008.14/0/2008.14_409/_pdf
• 本文言語コード: ja
• データソース種別:
  • JaLC
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可