Evaluation of 1/f noise characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET

• Takuya Imamoto

• Takeshi Sasaki

• Tetsuo Endoh

Bibliographic Information

Other Title

• Evaluation of 1 f noise characteristics in High k Metal Gate and SiON Poly Si Gate MOSFET
• Silicon devices and materials
• Silicon devices and materials

Journal

• 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報

  電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 110 (110), 195-198, 2010

  東京 : 電子情報通信学会

Keywords

• 1/f noise
• MOSFET
• High-k
• Random Telegraph Signal
• RTS

Details

• CRID: 1520009409310078208
• NII Article ID: 110007889999
• NII Article ID: 110007890307
• NII Book ID: AA1123312X
• ISSN: 09135685
• NDL BIB ID: 10753333
• NDL BIB ID: 10752459
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I10753333
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I10752459
• Text Lang: en
• NDL Source Classification:
  • ZN33(科学技術--電気工学・電気機械工業--電子工学・電気通信)
• Data Source:
  • NDL
  • CiNii Articles