書誌事項
- タイトル別名
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- OS0104 Analysis of Crack Propagation in Stealth Dicing Using Stress Intensity Factor
抄録
In stealth dicing (SD), a permeable nanosecond laser is focused inside a silicon wafer and scanned horizontally. A thermal shock wave is propagated every pulse toward the side to which the laser is irradiated, then a high dislocation density layer is formed inside a wafer after the thermal shock wave propagation. In our previous study, it was supposed that an internal crack whose initiation is a dislocation is propagated when the thermal shock wave by the next pulse overlaps with this layer partially. In this study, a two-dimensional thermal elasticity analysis based on the fracture mechanics was conducted. The internal crack propagation was analyzed by calculating the stress intensity factor at the crack tips and comparing with a threshold of that. As a result, validity of the previous hypothesis was suggested.
収録刊行物
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- M&M材料力学カンファレンス
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M&M材料力学カンファレンス 2009 (0), 73-74, 2009
一般社団法人 日本機械学会
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キーワード
詳細情報 詳細情報について
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- CRID
- 1390001205872842752
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- NII論文ID
- 110008064802
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- ISSN
- 24242845
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可