シリコン単結晶成長プロセスの数値シミュレーションに要求される熱物性値(<小特集>バルク成長分科会特集-最先端デバイスと科学技術-)  [in Japanese] Thermophysical Properties Required for Numerical Simulation of Single Crystalline Silicon Growth Processes(<Special Issue>Advanced Devices and, Science and Technology)  [in Japanese]

Access this Article

Search this Article

Author(s)

Abstract

小特集:バルク成長分科会特集-最先端デバイスと科学技術-

Thermophysical properties required for numerical simulation of silicon crystal growth processes have been investigated from Japanese silicon wafer producers. Results from the survey are presented for molten silicon, crystalline silicon and refractory materials. Thermal transport properties such as thermal conductivity of both melt and crystal are greatly important. Mechanical properties such as elastic constant of the crystal are required especially at high temperatures. Thermal transport properties of refractory materials are also essential for the global analysis of heat transfer in the furnace. However, refractory data have been kept confidential.

Journal

  • Journal of the Japanese Association for Crystal Growth

    Journal of the Japanese Association for Crystal Growth 30(5), 364-369, 2004

    The Japanese Association for Crystal Growth

References:  12

Cited by:  4

Codes

  • NII Article ID (NAID)
    110008593111
  • NII NACSIS-CAT ID (NCID)
    AN00188386
  • Text Lang
    JPN
  • Article Type
    Journal Article
  • ISSN
    0385-6275
  • NDL Article ID
    6826235
  • NDL Source Classification
    ZM35(科学技術--物理学)
  • NDL Call No.
    Z15-339
  • Data Source
    CJP  CJPref  NDL  NII-ELS  IR  J-STAGE 
Page Top