シリコン単結晶成長プロセスの数値シミュレーションに要求される熱物性値(<小特集>バルク成長分科会特集-最先端デバイスと科学技術-) [in Japanese] Thermophysical Properties Required for Numerical Simulation of Single Crystalline Silicon Growth Processes(<Special Issue>Advanced Devices and, Science and Technology) [in Japanese]
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- 福山 博之 Fukuyama Hiroyuki
- 東京工業大学大学院理工学研究科物質科学専攻 Dept. of Chemistry & Materials Science, Tokyo Institute of Technology
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- 塚田 隆夫 Tsukada Takao
- 東北大学多元物質科学研究所 Institute of Multidisciplinary Research for Advanced Materials, Tohoku University
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- 渡邉 匡人 [他] Watanabe Masahito
- 学習院大学理学部物理学科 Dept. of Physics, Gakushuin University
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- 田中 敏宏 Tanaka Toshihiro
- 大阪大学大学院工学研究科マテリアル応用工学専攻 Dept. of Materials Science & Processing, Osaka University
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- 馬場 哲也 Baba Tetsuya
- 産業技術総合研究所計測標準部 Materials Properties & Metrological Statistics Division, National Institute of Advanced Industrial Science & Technology
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- 日比谷 孟俊 Hibiya Taketoshi
- 東京都立科学技術大学工学部航空宇宙システム工学科 Dept. of Aerospace Engineering, Tokyo Metropolitan Institute of Technology
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Author(s)
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- 福山 博之 Fukuyama Hiroyuki
- 東京工業大学大学院理工学研究科物質科学専攻 Dept. of Chemistry & Materials Science, Tokyo Institute of Technology
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- 塚田 隆夫 Tsukada Takao
- 東北大学多元物質科学研究所 Institute of Multidisciplinary Research for Advanced Materials, Tohoku University
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- 渡邉 匡人 [他] Watanabe Masahito
- 学習院大学理学部物理学科 Dept. of Physics, Gakushuin University
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- 田中 敏宏 Tanaka Toshihiro
- 大阪大学大学院工学研究科マテリアル応用工学専攻 Dept. of Materials Science & Processing, Osaka University
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- 馬場 哲也 Baba Tetsuya
- 産業技術総合研究所計測標準部 Materials Properties & Metrological Statistics Division, National Institute of Advanced Industrial Science & Technology
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- 日比谷 孟俊 Hibiya Taketoshi
- 東京都立科学技術大学工学部航空宇宙システム工学科 Dept. of Aerospace Engineering, Tokyo Metropolitan Institute of Technology
Abstract
小特集：バルク成長分科会特集－最先端デバイスと科学技術－
Thermophysical properties required for numerical simulation of silicon crystal growth processes have been investigated from Japanese silicon wafer producers. Results from the survey are presented for molten silicon, crystalline silicon and refractory materials. Thermal transport properties such as thermal conductivity of both melt and crystal are greatly important. Mechanical properties such as elastic constant of the crystal are required especially at high temperatures. Thermal transport properties of refractory materials are also essential for the global analysis of heat transfer in the furnace. However, refractory data have been kept confidential.
Journal
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- Journal of the Japanese Association for Crystal Growth
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Journal of the Japanese Association for Crystal Growth 30(5), 364-369, 2004
The Japanese Association for Crystal Growth
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Tsukada Takao , Mito Mitsumasa , Hozawa Mitsunori , Li You-Rong , Imaishi Nobuyuki
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FUKUYAMA Hiroyuki , KOBATAKE Hidekazu , SUGIE Kazutoshi , BABA Yuya , SUGIOKA Ken-ichi , TSUKADA Takao
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