27pTJ-14 高濃度ボロン添加シリコンにおける銅析出物の研究(27pTJ 格子欠陥・ナノ構造(半導体),領域10(誘電体,格子欠陥,X線・粒子線,フォノン))  [in Japanese] 27pTJ-14 Cu precipitation in boron highly doped silicon  [in Japanese]

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  • Meeting Abstracts of the Physical Society of Japan

    Meeting Abstracts of the Physical Society of Japan 66.1.4(0), 980, 2011

    The Physical Society of Japan

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