Takeuchi プロットを用いた High-k/Metal-Gate MOSFET のばらつき評価  [in Japanese] Evaluation of Variability in High-k/Metal-Gate MOSFET using Takeuchi Plot  [in Japanese]

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Author(s)

Abstract

High-k/Metal-Gate(HKMG)MOSFETのV_<TH>ばらつきをTakeuchiプロットを用いて評価し,従来のSiON絶縁膜/Poly Si Gate(SiON)MOSFETと比較した.Takeuchiプロットに必要なパラメータ等はC-V測定から求めた.その結果,HKMG MOSFETでは,離散不純物揺らぎ(RDF)によるばらつきは確かに抑制されているものの,他の要因に起因する特性ばらつきが大きいことが明らかとなった.TakeuchiプロットはSiON MOSFETのみでなく,HKMG MOSFETに対しても特性ばらつきの強力な評価手法である.

VTH variability in high-k/metal-gate (HKMG) MOSFETs are evaluated using Takeuchi plot and compared with that in SiON MOSFETs for the first time. Parameters needed for Takeuchi plot is extracted from C-V measurement. It is found that, although VTH variability caused by random dopant fluctuation (RDF) is well suppressed, effects by the other variability causes are larger in HKMG MOSFETs. Takeuchi plot is a powerful tool to study variability origins in not only conventional SiON MOSFETs but also HKMG MOSFETs.

Journal

  • IEICE technical report

    IEICE technical report 111(187), 65-68, 2011-08-18

    The Institute of Electronics, Information and Communication Engineers

References:  7

Codes

  • NII Article ID (NAID)
    110008801167
  • NII NACSIS-CAT ID (NCID)
    AN10013254
  • Text Lang
    JPN
  • Article Type
    ART
  • ISSN
    09135685
  • NDL Article ID
    11238777
  • NDL Source Classification
    ZN33(科学技術--電気工学・電気機械工業--電子工学・電気通信)
  • NDL Call No.
    Z16-940
  • Data Source
    CJP  NDL  NII-ELS 
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