絶縁膜上におけるGe(Si)薄膜の溶融成長 : Si偏析効果による大粒径化  [in Japanese] Seed-Less Melting Growth of Ge(Si) on Insulator : Large Grain Formation by Si Segregation  [in Japanese]

Search this Article

Author(s)

Abstract

絶縁膜上におけるSi添加Ge薄膜[Ge(Si)薄膜]の溶融成長を検討した.SiGe系相図の固相線と液相線で挟まれた領域の温度で急速熱処理を行うと,大粒径(15〜30μm)を有するSiGe結晶粒が成長した.結晶粒には,粒の中心付近でピーク値を有するSi濃度分布が形成されていることが明らかになった.Si濃度のピーク値は,熱処理温度における固相線のSi濃度に一致した.以上の現象は,熱処理時のSi偏析によるSiリッチ結晶核の形成と,冷却過程におけるSi偏析を伴う横方向成長に起因すると考えられる.

Melting growth of Si-doped Ge films, i.e., Ge(Si) films, on insulator has been investigated. After rapid-thermal annealing of Ge(Si) films in the temperatures region surrounded with the liquidus curve and solidus curve of the phase diagram of the SiGe system, SiGe crystals with large-grains (15-30μm) were formed. The Si concentration profiles in the grains showed peaks at the center of grains. The peak Si concentrations were almost the same as the Si concentrations along the solidus curve at the annealing temperature. These phenomena were explained based on the formation of Si-rich micro-crystals during annealing and subsequent Si-segregated lateral-growth during cooling.

Journal

  • Technical report of IEICE. OME

    Technical report of IEICE. OME 112(19), 61-62, 2012-04-20

    The Institute of Electronics, Information and Communication Engineers

References:  3

Codes

  • NII Article ID (NAID)
    110009564371
  • NII NACSIS-CAT ID (NCID)
    AN10013334
  • Text Lang
    JPN
  • Article Type
    ART
  • Data Source
    CJP  NII-ELS 
Page Top