The dissolution process of Si into Ge melt and SiGe growth mechanism by X-ray penetration method

• Muthusamy OMPRAKASH

• Mukannan ARIVANANDHAN

• Raman ARUNKUMAR

Bibliographic Information

Other Title

• 電子デバイス
• デンシ デバイス

Journal

• 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報

  電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 113 (39), 27-31, 2013-05

  東京 : 電子情報通信学会

Keywords

• Heat and mass transfer
• Growth from solutions
• Silicon-Germanium alloy
• In-situ observation

Details

• CRID: 1520290883899914752
• NII Article ID: 110009768791
• NII Article ID: 110009770591
• NII Article ID: 110009768503
• NII Book ID: AA1123312X
• ISSN: 09135685
• NDL BIB ID: 024578117
• NDL BIB ID: 024583142
• NDL BIB ID: 024582739
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I024578117
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I024583142
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I024582739
• Text Lang: en
• NDL Source Classification:
  • ZN33(科学技術--電気工学・電気機械工業--電子工学・電気通信)
• Data Source:
  • NDL
  • CiNii Articles