書誌事項
- タイトル別名
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- Non-Radiative Carrier Recombination and Carrier Transport Properties in the Multiple Quantum Well Solar Cell
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To investigate the carrier generation, thermal escape, and recombination processes in the strain-balanced InGaAs/GaAsP multiple quantum well (MQW) structure into GaAs p-i-n solar cell, the frequency-dependent piezoelectric photothermal (PPT) method was adopted. Since the thermal diffusion length of the signal source decreases with increasing the chopping frequency, we investigated the depth profile of non-radiative recombination carrier loss. Two distinctive peaks were observed in the lower photon energy region below the bandgap of GaAs (Eg, 1.42 eV at RT) for the MQW structure inserted sample. They were caused by the excitonic absorption associated with the inter-subband transitions within the MQWs. Although PPT signal intensity at above the bandgap of GaAs decreased with increasing the chopping frequency, the signal intensity at MQW remained even at high frequency. These features are explainable in terms that photoexcited carriers thermally escape from MQW and diffuse to the GaAs substrate. Diffused carriers then recombine at GaAs substrate non-radiatively.
収録刊行物
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- 宮崎大学工学部紀要
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宮崎大学工学部紀要 43 17-20, 2014-07-31
宮崎大学工学部
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詳細情報 詳細情報について
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- CRID
- 1050570264722483584
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- NII論文ID
- 110009817974
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- NII書誌ID
- AA00732558
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- ISSN
- 05404924
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- HANDLE
- 10458/4969
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- 本文言語コード
- ja
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- 資料種別
- departmental bulletin paper
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- データソース種別
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- IRDB
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