10aAE-2 Spontaneous distortion and critical concentration due to strong quadrupole-strain interaction of vacancy orbital in silicon crystal

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  • 10aAE-2 シリコン原子空孔軌道の強い四極子-歪み結合による自発歪みと臨界濃度(10aAE 格子欠陥(半導体・金属・転位),領域10(構造物性(誘電体,格子欠陥,X線・粒子線,フォノン)))

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