エピタキシャルSmCo_5合金薄膜の作製とCoサイトのNi原子による置換(信号処理,一般) Preparation of SmCo5 Alloy Epitaxial Thin Films and Replacement of Co Site with Ni Atom

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SmCo_<5-1>Ni_x(x=0,1,4,5)合金薄膜を100から500℃の基板温度でbcc-Cr(100)およびfcc-Cu(111)下地層上に形成し,膜成長過程と構造特性を反射高速電子回折およびX線回折により調べた.いずれの下地層上においても,Ni/Co組成および基板温度の増加に伴い,RT_5型規則構造(R:希土類金属,T:遷移金属)を持つエピタキシャル結晶の形成が促進された.Cr下地層上にエピタキシャル成長した膜は,c軸が面内に存在し,それらが互いに直交したRT_5(1120)双結晶から,Cu下地層上に成長した膜は,c軸が面直に向いたRT_5(0001)双結晶から構成された.Ni/Co組成および基板温度の増加に伴い,長距離規則度が増加した.基板温度500℃でCr下地層上に形成したSmCo_5,SmCo_4Ni,SmCoNi_4,SmNi_5膜の規則度は,それぞれ,0.60,0.68,0.83,0.89であり,Cu下地層上では,0.77,0.82,0.89,0.97であった.RT_5型構造のCoサイトをNi原子で置換することにより,規則相形成が促進されることが明らかになった.

SmCo_<5-x>Ni_x(x=0, 1, 4, 5) alloy thin films are deposited on bcc-Cr(100) and fcc-Cu(111) underlayers formed on single-crystal substrates by varying the substrate temperature in a range from 100 to 500℃. The film growth behavior and the resulting structure are investigated by in-situ reflection high-energy electron diffraction and X-ray diffraction, respectively. On both kinds of underlayer, formation of epitaxial crystal with RT_5-type ordered structure (R: rare-earth metal, T: transition metal) is promoted with increasing the Ni/Co composition or the substrate temperature. The films epitaxially grown on Cr underlayers consists of two RT_5(1120) crystals whose c-axes are lying in the film plane and rotated around the film normal by 90° each other. The films grown on Cu underlayers are composed of two types of RT_5(0001) crystal with the c-axis perpendicular to the substrate surface. The long-range order degree increases as the Ni content or the substrate temperature increases. The order degrees of SmCo_5, SmCo_4Ni, SmCoNi_4, and SmNi_5 films deposited on Cr underlayers at 500℃ are 0.60, 0.68, 0.83, and 0.89, whereas those deposited on Cu underlayers at 500℃ are 0.77, 0.82, 0.89, and 0.97, respectively. A replacement of Co site in RT_5-type structure with Ni atom is useful for enhancing the RT_5 phase formation.

収録刊行物

  • 電子情報通信学会技術研究報告. MR, 磁気記録

    電子情報通信学会技術研究報告. MR, 磁気記録 113(345), 21-26, 2013-12-05

    一般社団法人電子情報通信学会

各種コード

  • NII論文ID(NAID)
    110009902853
  • NII書誌ID(NCID)
    AN10013050
  • 本文言語コード
    JPN
  • データ提供元
    NII-ELS 
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