F161004 Si基板上GaN系パワーデバイスの開発とその応用(【F16100】次世代窒化物半導体デバイスとその精密加工技術の展望,情報・知能・精密機器部門企画,先端技術フォーラム)

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  • 上田 哲三
    パナソニック株式会社AIS社技術本部グリーンイノベーション開発センター

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タイトル別名
  • F161004 Development of GaN-based Power Devices on Si Substrates and its Application to Power Switching Systems

抄録

GaN-based power devices have been expected to overcome the performance limit of conventional Si-based devices and enable highly efficient power switching systems. Technical issues have been mostly solved for the commercialization so far and the remaining tasks are to find more suitable applications and extract the full potential of the superior material properties. In this paper, we present state-of-the-art GaN-based power devices on cost-effective Si substrates and their applications to power switching systems. Novel Gate Injection Transistors (GITs) with normally-off operation enable highly efficient operations of isolated DC-DC converters in power supplies. The above results demonstrate very promising potentials of GaN based power switching transistors.

収録刊行物

  • 年次大会

    年次大会 2013 (0), _F161004-1-_F161004-3, 2013

    一般社団法人 日本機械学会

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