J012013 Strength of Carbon Nanotube as Nano-component of Electronic Devices under High Current Density

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  • J012013 電子デバイス用カーボンナノチューブの高密度電流下における強度特性([J012-03]電子情報機器、電子デバイスの強度・信頼性評価と熱制御(3))

Abstract

Carbon nanotube (CNT) is expected to use as the materials of nano-scale components of electronic devices. In this study, we investigated the damage mechanism of Multi-walled (MW) CNT structures used as nano-component of electronic devices. An acceleration testing system of direct current loading was designed and the test structures collected MWCNT at the gap of Pt thin-film electrodes were treated in the system. The damage mechanisms of MWCNT are regarded as the effects of oxidation by Joule heating and/or the electromigration (EM) by high-density electron flows. Therefore the tests were conducted under the two kinds of current density and temperature conditions, and furthermore in both of air and low oxygen conditions. Lifetime of the specimen was determined by voltage measurements during the acceleration tests under the constant current condition. Their fracture phenomena were evaluated by means of microscopic observations. As the results, the amounts of lifetime of MWCNT were longer in the lower oxygen concentrations than in the air condition. In the microscopic studies, it was confirmed that the disconnections of MWCNT were occurred at the cathode side of the MWCNT structures under low current density, and the center area of MWCNT under high current density. Both types of damage morphologies induced by oxidation and EM were observed at the damaged MWCNT.

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