J211017 多段ICP-RIEプロセスを用いた架橋構造Siナノワイヤの加工([J211-01]"壊れない"マイクロシステムのためのナノ力学・ナノ計測(1))

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  • J211017 Simple Fabrication of Free-Standing Silicon Nanowire Using Multi-Step ICP-RIE Process

抄録

The ultra high frequency resonator is one of the important components in RF MEMS. Silicon nanowire (SiNW) resonator vibrating at high frequencies, several hundred MHz, is expected to be applied for ultrahigh resolution sensor, quantum electromechanics and high speed logic devices. A fabrication method of free standing SiNW with high integration and high yield to give it mechanical freedom and integrate them with a MEMS device structure is strongly required for practical use of the SiNW resonator. This paper reports on two new simple fabrication methods for SiNWs using electron beam lithography, inductively coupled plasma reactive ion etching (ICP-RIE), and thermal oxidation. We succeeded in making freestanding bridge SiNWs with the width of 100 nm, the height of 100 nm, and the length ranged from 5 to 10 μm on Si substrate.

収録刊行物

  • 年次大会

    年次大会 2013 (0), _J211017-1-_J211017-3, 2013

    一般社団法人 日本機械学会

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