OS1312 半導体薄膜配線材料の結晶品質劣化挙動の可視化に関する検討

• 範 伝紅

  東北大学大学院工学研究科ナノメカニクス専攻

• 鈴木 研

  東北大学エネルギー安全科学国際研究センター

• 三浦 英生

  東北大学エネルギー安全科学国際研究センター

書誌事項

タイトル別名

• OS1312 Visualization of the degradation process of the crystallinity of thin-film interconnections in semiconductor devices

抄録

Electroplated copper thin films have started to be applied to thin film interconnections and TSV (Through Silicon Via) in semiconductor devices because of its low electric resistivity. However, both mechanical and electronic properties of electroplated copper films vary drastically depending on the electroplating conditions and thermal history. That is because the micro texture of the film is largely changed as a function of the electroplating conditions and the annealing temperature. In this study, the change of the crystallographic quality of the polycrystalline copper thin-film was observed by using an EBSD (Electron Back Scatter Diffraction) method. This EBSD analysis clearly showed that the degradation of the crystallinity of the electroplated copper thin film after the annealing was caused by stress-induced migration around the grain boundaries with low crystallinity.

収録刊行物

• M&M材料力学カンファレンス

  M&M材料力学カンファレンス 2012 (0), _OS1312-1_-_OS1312-2_, 2012

  一般社団法人 日本機械学会

キーワード

• Electroplated copper
• Stress-induced migration
• Crystallinity degradation

詳細情報

• CRID: 1390282680848589312
• NII論文ID: 110009937449
• DOI: 10.1299/jsmemm.2012._os1312-1_
• ISSN: 24242845
• Web Site: https://www.jstage.jst.go.jp/article/jsmemm/2012/0/2012__OS1312-1_/_pdf
• 本文言語コード: ja
• データソース種別:
  • JaLC
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可