OS1906 ナノ構造体を形成した層間絶縁膜の機械的特性の評価

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  • OS1906 Evaluation on Mechanical Properties of Nano-structured Low-k Insulating Layer

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Semiconductor devices are getting smaller and smaller, which lead to some problems such as cross-talk and signal delay. Therefore, the low-dielectric insulating layer is necessary for semiconductor devices. To overcome this problem, we propose a nano-structured insulating layer. Nano-sized structure is orderly aligned, which are made by dynamic oblique deposition (DOD). The size and structure of structure can be controlled in DOD method and, thus, the amounts of air space in insulating layer are able to be controlled. The objective of this study is to present the way to measure Elastic modulus about multilayer thin films, and to measure elastic modulus of nano-structured insulating layer. Multilayer structure is modeled as serial springs, so we obtain the elastic modulus of nano-structured insulating layer from nano-indentation results. The results show that elastic modulus of nano-structured insulating layer is mainly influenced by the volume density of nano-structures.

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