C07 タイル構造研磨パッドによるSiウェハの平坦化加工に関する基礎研究(OS10 班磨技術(2))

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  • C07 Fundamental Study on Planarization of Si wafer by using Tiles Structured Polishing Pad

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In this study, the fundamental material removal characteristics by using tiles structured polishing pad containing diamond abrasives have been investigated. A series of polishing tests has been carried out and the fundamental material removal characteristics have been discussed. It has been shown that the removal rate increases as polishing pressure increases. However polished surface roughness does not depend on the polishing pressure. Moreover, it has not been observed a large scale fracture on finished surface.

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