20pm3-PM004 単結晶シリコンの疲労寿命に及ぼす結晶方位と環境の効果

• ウダヤクマール アラス

  Department of Mechanical engineering, Nagoya institute of Technology

• 泉 隼人

  Department of Mechanical engineering, Nagoya institute of Technology

• 小岩 康三

  Department of Mechanical engineering, Nagoya institute of Technology

• 神谷 庄司

  Department of Mechanical engineering, Nagoya institute of Technology

書誌事項

タイトル別名

• 20pm3-PM004 Effect of crystal orientation and environment on fatigue lifetime of single crystal silicon

抄録

This paper deals with the effect of crystal orientation and environment on fatigue lifetime of single crystal silicon (SCS). Fatigue lifetime was examined with the same shape of specimen, with same level of applied stress in two different environment of lab air and hydrogen with two different crystal orientation specimens of (100) wafer with <110> notch orientation and (111) wafer with <11-2> notch orientation. The resulting lifetime shows slight difference in between two different crystal orientation specimens. But for the case of different environment there is no significant difference in lifetime for the both two type of specimen even though level of difference in relative humidity was 30%.

収録刊行物

• マイクロ・ナノ工学シンポジウム

  マイクロ・ナノ工学シンポジウム 2014.6 (0), _20pm3-PM0-_20pm3-PM0, 2014

  一般社団法人 日本機械学会

キーワード

• Single crystal silicon
• Crystal orientation
• Fatigue lifetime
• Relative humidity

詳細情報

• CRID: 1390001205903613184
• NII論文ID: 110009950625
• DOI: 10.1299/jsmemnm.2014.6._20pm3-pm0_4
• ISSN: 24329495
• Web Site: https://www.jstage.jst.go.jp/article/jsmemnm/2014.6/0/2014.6__20pm3-PM0_4/_pdf
• 本文言語コード: en
• データソース種別:
  • JaLC
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可