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- 干川 圭吾
- 信州大学工学部
書誌事項
- タイトル別名
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- Vertical Bridgman Growth of Various Kinds of Single Crystals(<Special Issue>Recent Advance in Functional Single Crystals)
- 垂直ブリッジマン法による機能性単結晶成長
- スイチョク ブリッジマンホウ ニ ヨル キノウセイタンケッショウ セイチョウ
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Improved vertical Bridgman growth techniques for various kinds of single crystal are introduced and discussed. In the first, compound semiconductors of GaAs and InP are grown by the liquid encapsulated vertical Bridgman growth technique, using pyrolytic boron nitride crucibles, and the role of liquid boric oxide (B_2O_3) is discussed from the viewpoints of the single crystal growth and the elimination of dislocations. In the second, various kinds of oxide crystals, such as LiNbO_3, La_3Ga_5SiO_<14>, La_3Ta_<0.5>Ga_<5.5>O_<14,> and KNbO_3, are grown by the vertical Bridgman growth technique using platinum crucibles, and the problems of adherence between the crucibles and crystals grown in them are discussed. In the third, α-Al_2O_3 (sapphire) and α-Al_2O_3/YAG:Ce eutectics are grown by the vertical Bridgman growth technique using iridium, molybdenum and tungsten crucibles, and the linear thermal expansion coefficients of the crystals grown and the crucibles used are discussed from the viewpoint of crystal release from the crucible and reuse of the crucible.
収録刊行物
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- 日本結晶成長学会誌
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日本結晶成長学会誌 42 (2), 110-118, 2015
日本結晶成長学会
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詳細情報
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- CRID
- 1390001205897273216
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- NII論文ID
- 110009975288
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- NII書誌ID
- AA12677650
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- ISSN
- 21887268
- 21878366
- 03856275
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- NDL書誌ID
- 026621256
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可